BCR08AS Powerex, Inc., BCR08AS Datasheet - Page 2

• Manufacturer Part Number: BCR08AS
• Description: Low Power Use Non-insulated Type, Planar Passivation Type
• Manufacturer: Powerex, Inc.

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
1. Junction temperature
2. Rate of decay of on-state commutating current
3. Peak off-state voltage
I
V
V
V
V
V
I
I
I
I
V
R
(dv/dt)
2. Measurement using the gate trigger characteristics measurement circuit.
3. Mounted on 25mm
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
DRM
FGT !
RGT !
RGT #
FGT #
TM
FGT !
RGT !
RGT #
FGT #
GD
th (j-a)
Symbol
T
(di/dt)
V
j
D
=125 C
=400V
c
c
=–0.4A/ms
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
10
10
10
MAXIMUM ON-STATE CHARACTERISTICS
–1
7
5
4
3
2
7
5
4
3
2
1
0
0
25mm
Parameter
ON-STATE VOLTAGE (V)
Test conditions
1
t0.7mm ceramic plate with solder.
2
2
2
T
j
= 25°C
!
@
#
$
!
@
#
$
3
T
4
j
= 125°C
T
T
T
T
T
Junction to case
T
j
c
j
j
j
j
=125 C, V
=25 C, V
=25 C, V
=125 C, V
=125 C
=25 C, I
4
TM
D
D
DRM
=6V, R
=6V, R
D
=1.2A, Instantaneous measurement
=1/2V
5
applied
3
L
L
DRM
=6 , R
=6 , R
Test conditions
G
G
=330
=330
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
10
8
6
4
2
0
10
Commutating voltage and current waveforms
MITSUBISHI SEMICONDUCTOR TRIAC
RATED SURGE ON-STATE CURRENT
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
0
(dv/dt)c
2 3
CONDUCTION TIME
(CYCLES AT 60Hz)
(inductive load)
4
5 7 10
Min.
1
0.1
0.5
—
—
—
—
—
—
—
—
—
—
—
(di/dt)c
2 3
LOW POWER USE
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
TIME
TIME
TIME
4
V
BCR08AS
D
5 7 10
Max.
1.0
2.0
2.0
2.0
2.0
2.0
—
—
10
65
5
5
5
2
Mar. 2002
V/ s
Unit
C/ W
mA
mA
mA
mA
mA
V
V
V
V
V
V