2N4014 ST Microelectronics, Inc., 2N4014 Datasheet - Page 2

• Manufacturer Part Number: 2N4014
• Description: High-voltage, High Current Switch
• Manufacturer: ST Microelectronics, Inc.

2N4014
THERMAL DATA
ELECTRICAL CHARACTERISITCS(T
*
** See test circuit.
2/6
V
V(
V
V
R
V
V
R
Symbol
(BR)CE O
(B R)CES
(B R)E BO
Pulsed : pulse duration = 300 ms, duty cycle = 1 %.
CE( sat )
BE( sat )
C
C
t h j- cas e
t
t h j-amb
I
BR)CB O
h
t
CBO
h
o n
o f f
F E
CBO
EBO
f e
**
**
*
*
*
*
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cutoff Current
(I
Collector-base Breakdown
Voltage
(I
Collector-emitter Breakdown
Voltage (V
Collector-Emitter Breakdown
Voltage (I
Emitter-Base Breakdown Voltage
(I
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
DC Current Gain
High Frequency Current Gain
Collector-base Capacitance
Emitter-base Capacitance
Turn-on Time
Turn-off Time
E
E
C
= 0)
= 0)
= 0)
B
BE
Parameter
= 0)
= 0)
a mb
= 25 C unless otherwise specified)
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
I
f = 1 MHz
I
f = 1 MHz
I
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
E
C
C
C
B1
CB
CB
CC
= 10 A
=10 A
= 10 mA
=10 A
= 10 mA
= 100 mA
= 300 mA
= 500 mA
= 800 mA
= 1000 mA
= 10 mA
= 100 mA
= 300 mA
= 500 mA
= 800 mA
= 1000 mA
= 10 mA
= 100 mA
= 300 mA
= 1000 mA
= 800 mA
= 500 mA
= 50 mA
= 0
= 0
= 500 mA
= 500 mA
= – I
= 60 V
= 60 V
= 30 V
Test Conditions
B2
= 50
mA
T
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
V
I
V
B
B
B
B
B
B
B
B
B
B
B
B
B
amb
CE
CE
CE
CE
CE
CE
CE
CB
E B
CC
=1 mA
=10 mA
= 30 mA
= 50 mA
= 80 mA
= 100 mA
= 1 mA
= 10 mA
= 30 mA
= 50 mA
= 80 mA
= 100 mA
= 50 mA
= 1 V
= 1 V
= 1 V
= 5 V
= 2 V
= 1 V
= 10 V
= 10 V
= 0.5 V
= 30 V
= 100 C
Max
Max
Min.
0.9
80
80
50
30
60
40
25
20
35
6
3
146
486
Typ.
0.19
0.21
0.31
0.64
0.75
0.89
0.4
0.5
0.6
1.0
1.1
60
90
60
65
40
Max.
0.25
0.26
0.52
0.95
0.76
0.86
120
150
1.7
0.4
0.8
1.1
1.2
1.5
1.7
10
55
35
60
C/W
C/W
Unit
pF
pF
ns
ns
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A