BFR520T Philips Semiconductors (Acquired by NXP), BFR520T Datasheet - Page 2

• Manufacturer Part Number: BFR520T
• Description: BFR520T; NPN 9 GHZ Wideband Transistor;; Package: SOT416 (EMT3, SMPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
APPLICATIONS
Wideband applications such as
satellite TV tuners, cellular phones,
cordless phones, pagers etc., with
signal frequencies up to 2 GHz.
QUICK REFERENCE DATA
Note
1. T
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. T
2000 Apr 03
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
C
T
C
SYMBOL
SYMBOL
FE
stg
j
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT416 (SC-75) package.
CBO
CES
tot
CBO
CES
EBO
tot
NPN 9 GHz wideband transistor
UM
s
s
is the temperature at the soldering point of the collector tab.
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package.
PINNING
PIN
1
2
3
open emitter
R
up to T
I
I
T
I
T
I
T
open emitter
R
open collector
up to T
C
C
C
C
amb
amb
amb
BE
BE
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 5 mA; V
= 0
= 0
base
emitter
collector
= 25 C
= 25 C
= 25 C
s
s
= 75 C; note 1
= 75 C; note 1
DESCRIPTION
CONDITIONS
CONDITIONS
2
CE
CE
CE
CE
= 6 V; f = 900 MHz;
= 6 V; T
= 6 V; f = 1 GHz;
= 6 V; f = 900 MHz;
j
= 25 C
fpage
Marking code: N2.
60
MIN.
65
MIN.
Top view
Fig.1 SOT416.
1
120
9
15
1.1
TYP.
Product specification
20
15
2.5
70
150
+150
150
MAX.
3
BFR520T
20
15
70
150
250
1.6
MAX.
MBK090
2
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
GHz
dB
dB
UNIT