BFR35 Siemens (acquired by Infineon Technologies Corporation), BFR35 Datasheet - Page 3

• Manufacturer Part Number: BFR35
• Description: NPN Silicon RF Transistor (For low Distortion Broadband Amplifiers and Oscillators up to 2GHz at Collector Currents from 0.5ma to 20ma)
• Manufacturer: Siemens (acquired by Infineon Technologies Corporation)

2) G
Electrical Characteristics at T
Parameter
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Power gain
I
Z
f = 900 MHz
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 GHz
Semiconductor Group
C
C
C
C
L
CB
CE
EB
= 2 mA, V
= 15 mA, V
= 15 mA, V
= 15 mA, V
= Z
ma
= 0.5 V, f = 1 MHz
= 10 V, f = 1 MHz
= 10 V, f = 1 MHz
Lopt
= | S
21
CE
/ S
CE
2)
CE
CE
12
= 6 V, Z
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
| (k-(k
2
S
-1)
S
S
= Z
= Z
= Z
1/2
Sopt
L
)
Sopt
= 50
A
= 25°C, unless otherwise specified.
3
Symbol
f
C
C
C
F
G
| S
T
cb
ce
eb
ma
21e
|
2
min.
-
-
-
-
-
-
-
-
-
3.5
Values
typ.
5
0.38
0.2
0.7
1.8
2.9
15
9.5
12.5
7
max.
-
-
-
-
-
-
-
-
-
0.6
BFR 35AP
Dec-12-1996
Unit
GHz
pF
dB