BFR180 Infineon Technologies Corporation, BFR180 Datasheet - Page 3

• Manufacturer Part Number: BFR180
• Description: NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
AC characteristics
Transition frequency
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 GHz
Power gain, maximum stable
I
f = 900 MHz
f = 1.8 GHz
1
C
C
C
C
G
CB
CE
EB
= 3 mA, V
= 1 mA, V
= 1 mA, V
= 1 mA, V
ms
= 0.5 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
= | S
21
CE
CE
CE
CE
/ S
12
= 5 V, f = 500 MHz
= 5 V, Z
= 5 V, Z
= 5 V, Z
|
(verified by random sampling)
S
S
S
= Z
= Z
= Z
Sopt
L
Sopt
1)
= 50
A
, Z
= 25°C, unless otherwise specified.
,


L
,
= Z
Lopt
,
3
Symbol
f
C
C
C
F
G
|S
T
cb
ce
eb
ms
21e
|
2
min.
5
-
-
-
-
-
-
-
-
-
Values
0.25
0.18
2.25
13.5
10.5
typ.
0.1
2.1
5.5
7
8
max.
Jun-27-2001
0.4
-
-
-
-
-
-
-
-
-
BFR180
Unit
GHz
pF
dB