PEMH7 Philips Semiconductors (Acquired by NXP), PEMH7 Datasheet - Page 4

• Manufacturer Part Number: PEMH7
• Description: PEMH7; NPN Resistor-equipped Transistors; R1 = 4.7 Kohm, R2 = Open;; Package: SOT666 (SS-Mini)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
CHARACTERISTICS
T
2001 Oct 22
Per transistor
I
I
I
h
V
R1
C
handbook, halfpage
SYMBOL
amb
CBO
CEO
EBO
FE
CEsat
c
NPN resistor-equipped transistors;
R1 = 4.7 k , R2 = open
V
(1) T
(2) T
(3) T
Fig.3
CE
= 25 C unless otherwise specified.
h FE
10
10
= 5 V.
amb
amb
amb
10
3
2
= 100 C.
= 25 C.
= 40 C.
1
DC current gain as a function of collector
current; typical values.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
collector capacitance
1
PARAMETER
(1)
(2)
(3)
10
I C (mA)
MHC074
10
2
V
V
V
V
V
I
I
C
E
CB
CE
CE
EB
CE
= i
= 5 mA; I
= 5 V; I
= 50 V; I
= 50 V; I
= 30 V; I
= 5 V; I
e
= 0; V
4
CONDITIONS
C
C
B
handbook, halfpage
CB
E
B
B
= 0.25 mA
= 0
= 1 mA
V CEsat
I
(1) T
(2) T
(3) T
Fig.4
= 0
= 0
= 0; T
C
(mV)
= 10 V; f = 1 MHz
/I
B
10
10
= 20.
10
amb
amb
amb
10
3
2
j
= 150 C
1
= 100 C.
= 25 C.
= 40 C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
(1)
(2)
(3)
200
3.3
MIN.
330
4.7
Preliminary specification
TYP.
10
I C (mA)
100
1
50
100
100
6.1
2.5
MAX.
MHC075
PEMH7
10
2
nA
nA
mV
k
pF
UNIT
A
A