PIMD2 Philips Semiconductors (Acquired by NXP), PIMD2 Datasheet - Page 5

• Manufacturer Part Number: PIMD2
• Description: PEMD2; PIMD2; PUMD2; Npn/pnp Resistor-equipped Transistors; R1 = 22 Kohm, R2 = 22 KOhm;; Package: SOT666 (SS-Mini)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
2003 Jun 06
Per transistor
R
Per device
R
Per transistor; for the PNP transistor with negative polarity
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
i(off)
i(on)
th j-a
th j-a
c
NPN/PNP resistor-equipped transistors;
R1 = 22 k , R2 = 22 k
= 25 C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
thermal resistance from junction to ambient
thermal resistance from junction to ambient
TR1 (NPN)
TR2 (PNP)
SOT363
SOT457
SOT666
SOT363
SOT457
SOT666
PARAMETER
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= 0.5 mA; I
= 100 A; V
= 5 mA; V
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
e
= 0; V
5
CONDITIONS
C
C
CB
T
note 1
note 1
notes 1 and 2
T
note 1
note 1
notes 1 and 2
CE
E
B
B
= 0
= 5 mA
B
amb
amb
CE
= 0
= 0
= 0; T
= 10 mA
= 10 V; f = 1 MHz
= 0.3 V
CONDITIONS
= 5 V
25 C
25 C
j
= 150 C
PEMD2; PIMD2; PUMD2
60
2.5
15.4
0.8
MIN.
VALUE
625
417
625
416
208
416
1.1
1.7
22
1
TYP.
Product specification
100
1
50
180
150
0.8
28.6
1.2
2.5
3
MAX.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
nA
mA
V
V
V
k
pF
pF
UNIT
A
A