STT3490N SeCoS Halbleitertechnologie GmbH, STT3490N Datasheet - Page 2

• Manufacturer Part Number: STT3490N
• Description: N-channel Enhancement Mode Mos.fet 1.2 A, 150 V, Rds On 700 M
• Manufacturer: SeCoS Halbleitertechnologie GmbH

http://www.SeCoSGmbH.com/
25-Aug-2010 Rev. B
ELECTRICAL CHARACTERISTICS
Notes
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
a.
b.
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
Elektronische Bauelemente
Parameter
a
a
a
a
Symbol Min.
R
V
(T
T
T
I
C
I
I
C
DS(ON)
V
Q
C
Q
GS(th)
D(on)
Q
GSS
DSS
g
d(on)
d(off)
T
T
A
SD
oss
iss
rss
fs
gs
gd
r
g
f
= 25°C unless otherwise specified)
DYNAMIC
10
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
320
0.8
2.5
0.8
11
37
20
1
5
5
6
4
-
-
-
-
-
-
-
b
N-Channel Enhancement Mode Mos.FET
±100
1200
700
3.5
10
1
-
-
-
-
-
-
-
-
-
-
-
-
-
1.2 A, 150 V, R
mΩ
nC
uA
uA
nS
pF
STT3490N
V
A
S
V
Any changes of specification will not be informed individually.
V
V
V
V
V
V
V
V
I
V
I
V
R
V
f= 1MHz
S
D
DS
DS
DS
DS
DS
GS
GS
DS
DS
DD
DS
= 1.25A, V
= 1A
L
= 10, I
=V
= 0V, V
= 120V, V
= 120V, V
= 15V, I
= 10V, V
= 15V, V
DS(ON)
= 10V, I
= 4.5V, I
= 10V, V
= 5V, V
Test Conditions
GS
, I
700 m
D
D
GS
GS
D
D
= 250uA
= 1A, R
D
GS
GS
GS
GEN
= 1.2A
= 1.2A
= ±20V
= 1A
= 10V
GS
GS
= 4.5V,
= 0V,
= 0V
= 10V,
= 0V
= 0V, T
GEN
Page 2 of 4
= 6
J
= 55°C