BCV49C Philips Semiconductors (Acquired by NXP), BCV49C Datasheet - Page 2

• Manufacturer Part Number: BCV49C
• Description: BCV29; BCV49; NPN Darlington Transistors;; Package: SOT89 (MPT3, UPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN small-signal Darlington transistor in a surface mount
SOT89 plastic package. PNP complements: BCV28 and
BCV48.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
1999 Apr 08
BCV29
BCV49
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
High current (max. 500 mA)
Low voltage (max. 60 V)
High DC current gain (min. 20000).
Preamplifier input applications.
CBO
CES
EBO
tot
NPN Darlington transistors
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
BCV29
BCV49
BCV29
BCV49
PARAMETER
MARKING CODE
EG
EF
2
PINNING
handbook, halfpage
open emitter
V
open collector
T
amb
Fig.1
BE
PIN
Bottom view
CONDITIONS
1
2
3
= 0
25 C; note 1
1
Simplified outline (SOT89) and symbol.
emitter
collector
base
2
3
65
65
MIN.
DESCRIPTION
BCV29; BCV49
Product specification
40
80
30
60
10
500
1
200
1.3
+150
150
+150
MAX.
3
TR1
MAM300
TR2
2
1
V
V
V
V
V
mA
A
mA
W
C
C
C
2
.
UNIT