IDT6116L/S Integrated Device Technology, Inc., IDT6116L/S Datasheet - Page 4

• Manufacturer Part Number: IDT6116L/S
• Description: CMOS Static RAM 16k : 2kx8
• Manufacturer: Integrated Device Technology, Inc.

NOTES:
1. All values are maximum guaranteed values.
2. f
NOTES:
1. T
2. t
3. This parameter is guaranteed by device characterization, but is not production tested.
I
I
V
t
t
CCDR
CDR
R
I
Symbol
LI
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
DR
(3)
I
I
I
I
CC2
I
MAX
Symbol
RC
CC1
SB1
SB
A
(3)
= + 25°C
= Read Cycle Time.
= 1/t
Operating Power Supply
Current, CS < V
Outputs Open
Dynamic Operating
Current, CS < V
Outputs Open
Standby Power Supply
Current (TTL Level)
Full Standby Power
Supply Current (CMOS
Level), CS > V
or V
V
V
CS > V
V
V
RC
CC
CC
CC
CC
, only address inputs are toggling at f
IN
= Max., f
= Max., f = f
= Max., f = f
= Max., V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Input Leakage Current
V
> V
CC
Parameter
IH
, Outputs Open
for Data Retention
HC
, f = 0
=
IN
HC
IL
IL
0
,
,
MAX
MAX
< V
,
Parameter
(2)
(2)
LC
Power
SA
SA
SA
SA
LA
LA
LA
LA
Com'l
& Ind
MAX
100
0.1
80
75
90
25
20
6116SA45
6116LA45
2
, f = 0 means address inputs are not changing.
CS > V
V
IN
100
Mil
0.9
90
85
95
25
20
10
> V
Test Condition
HC
HC
or < V
6116SA55
____
6116LA55
Mil Only
100
0.9
90
85
90
25
20
10
MIL.
COM'L.
LC
4
6116SA70
6116LA70
Mil Only
100
0.9
Min.
t
90
85
90
25
20
10
RC
2.0
____
____
____
____
Military, Commercial, and In dustrial Temperature Ranges
(2)
6116SA90
6116LA90
2.0V
Mil Only
0.5
0.5
____
____
____
0
100
0.9
90
85
85
25
25
10
V
Typ.
CC
@
(1)
3.0V
____
____
____
____
1.5
1.5
6116SA120
6116LA120
Mil Only
100
0.9
90
85
85
25
15
10
2.0V
200
____
____
____
20
2
V
6116SA150
6116LA150
Max.
CC
Mil Only
@
0.9
90
85
90
85
25
15
10
3.0V
300
____
____
____
30
2
3089 tbl 09
3089 tbl 10
Unit
mA
mA
mA
mA
Unit
ns
ns
V
A
A