ZLLS1000_06 Zetex Inc., ZLLS1000_06 Datasheet

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ZLLS1000_06

Manufacturer Part Number
ZLLS1000_06
Description
40V Silicon HIGH Current LOW Leakage Schottky Diode
Manufacturer
Zetex Inc.
Datasheet
1.ZLLS1000_06.pdf (6 pages)
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
SUMMARY
Schottky Diode V
DESCRIPTION
This compact SOT23 packaged Schottky diode offers users an excellent performance
combination comprising high current operation, extremely low leakage and low
forward voltage ensuring suitability for applications requiring efficient operation at
higher temperatures (above 85 C) see Operational Efficiency chart on page 4.
Key benefits:
FEATURES
• Low equivalent on resistance
• Extremely low leakage (20 A @30V)
• High current capability (I
• Low V
• SOT23 package
• ZLLS1000 complements low temperature equivalent ZHCS1000
• Package thermally rated to 150 C
APPLICATIONS
• DC - DC converters
• Strobes
• Mobile phones
• Charging circuits
• Motor control
ORDERING INFORMATION
DEVICE MARKING
L10
ISSUE 3 - MAY 2006
DEVICE
ZLLS1000TA 7
ZLLS1000TC
F
, fast switching Schottky
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area savings
REEL
(inches)
13
R
= 40V; I
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
F
= 1.16A)
F
= 1.16A; I
QUANTITY
PER REEL
3000 units
10000 units
R
= 20 A
1
S E M I C O N D U C T O R S
Top view
ZLLS1000

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ZLLS1000_06 Summary of contents

Page 1

SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode V = 40V 1.16A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage ...

Page 2

ZLLS1000 ABSOLUTE MAXIMUM RATINGS PARAMETER Schottky diode Continuous reverse voltage Forward current Peak repetitive forward current Rectangular pulse duty cycle Non repetitive forward current Package Power dissipation at T =25 C amb single die continuous single die measured at t<5 ...

Page 3

ISSUE 3 - MAY 2006 TYPICAL CHARACTERISTICS 3 ZLLS1000 ...

Page 4

ZLLS1000 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) SCHOTTKY DIODE CHARACTERISTICS PARAMETER SYMBOL Reverse breakdown voltage V (BR)R Forward voltage V F Reverse current I R Diode capacitance C D Reverse recovery time t rr Reverse recovery charge ...

Page 5

ISSUE 3 - MAY 2006 TYPICAL CHARACTERISTICS 5 ZLLS1000 ...

Page 6

ZLLS1000 Package Outline Package Dimensions Millimeters DIM Min. Max. Min. A 2.67 3.05 0.105 B 1.20 1.40 0.047 C – 1.10 D 0.37 0.53 0.0145 F 0.085 0.15 0.0033 G NOM 1.9 K 0.01 0.10 0.0004 L 2.10 2.50 0.0825 ...

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