S8550 Hamamatsu Photonic Systems, S8550 Datasheet - Page 2

• Manufacturer Part Number: S8550
• Manufacturer: Hamamatsu Photonic Systems

2
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]
Dimensional outline (unit: mm)
Quantum efficiency vs. wavelength
ACTIVE AREA
1.6 × 1.6 (ANODE)
100
80
60
40
20
0
A4
A3
A2
A1
200
2.30
B4
B3
B2
B1
1.27
C4
C3
C2
C1
19.50
D4
D3
D2
D1
15.24
400
ARRAY 2
E4
E3
E2
E1
WAVELENGTH (nm)
F4
F3
F2
F1
ARRAY 1
G4
G3
G2
G1
600
H4
H3
H2
H1
800
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
PHOTOSENSITIVE
SURFACE
(Typ. Ta=25 ˚C)
1000
1200
Pin No. Element No. Pin No. Element No. Pin No. Element No. Pin No. Element No.
KAPDB0059EA
11a
13a
1a
3a
5a
7a
9a
2b
4b
CATHODE 1
0.9
C2
D2
G1
H1
C1
B1
E2
A2
e
d
b
a
c
10b
12b
11c
13c
f
6b
8b
1c
3c
1d
Gain vs. reverse voltage
13 12 11 10 9 8 7 6 5 4 3 2 1
1000
1.27
100
D1
E1
G2
A1
B2
H2
A3
F1
F2
10
1
0
15.24
CATHODE 1: CATHODE OF ARRAY 1
CATHODE 2: CATHODE OF ARRAY 2
11d
13d
10e
12e
3d
2e
4e
6e
8e
100
REVERSE VOLTAGE
C3
G3
H4
B3
C4
D4
E4
F4
H3
INDEX MARK
Si APD array
11f
13f
1f
3f
5f
7f
9f
200
(Typ. Ta=25 ˚C, λ=420 nm)
CATHODE 2
G4
A4
B4
D3
E3
F3
KAPDA0023EA
300
(V)
S8550
Cat. No. KAPD1009E01
Sep. 2001 DN
400
KAPDB0063EA