S1M8660AX01-F0T0 Samsung Semiconductor, Inc., S1M8660AX01-F0T0 Datasheet - Page 7

• Manufacturer Part Number: S1M8660AX01-F0T0
• Description: Cdma/pcs/gps Triple Mode IF/ Baseband IC
• Manufacturer: Samsung Semiconductor, Inc.

RX IF/BBA WITH GPS
AC Characteristics
CDMA Performance
Input sensitivity
Maximum input
signal
AGC gain slope
AGC gain error
over temperature
IF input frequency
range
IF input
Impedance
Noise figure
IIP3
Spurious contents
Spurious content
related to jammer
Characteristic
Maximum AGC gain. Control input signal so
that output corresponding to 3LSB is output
from ADC.
Minimum AGC gain. Control input signal so
that output corresponding to 3LSB is output
from ADC.
PDM 3.3V Mode
-30 to +85 C.
Cin < 2pF
Input power = -102dBm
Input power = -75dBm
Input power = -25dBm
AGC gain Max.
AGC gain Min.
ADC generated harmonic frequency
component. Two signals in the in-band are
each mixed with signals which will allow ADC
to produce -7dB output signals. The harmonic
and non-harmonic components of the ADC
output signals between 1kHz to 20MHz are
extracted and added. The AGC control
voltage is controlled so that ADC output is full
scale when the input signal is -80dBm.
In-band spurious peak value produced by IMD
based on 2 jammer signals.
One in-band signal(@50kHz,0.5*F/S)
and two jammers(@900kHz, 22dB*F/S and
@1.7MHz, 21dB*F/S)are simultaneously
input. AGC control voltage is controlled so
that ADC output is F/S when the input signal
is -80dBm.
Test Conditions
IIP3max
Symbol
VCSEN
VCMAX
IIP3min
NFmax
NFmin
NFmid
GVAR
LOPE
TSpur
Jspur
GS
Fin
Zin
-102
Min
0.8
-53
-10
43
-3
-
-
-
-
-
-
-
S1M8662A (Preliminary)
Typ
1.0
50
-
-
-
-
-
-
-
-
-
-
-
-18.4
Max
250
-12
1.2
-25
57
20
72
3
7
-
-
-
dB/V
dBm
dBm
MHz
dBm
dBm
Unit
dBc
dBc
k
dB
dB
dB
dB
7