S1M8836 Samsung Semiconductor, Inc., S1M8836 Datasheet - Page 9

• Manufacturer Part Number: S1M8836
• Manufacturer: Samsung Semiconductor, Inc.

FRACTIONAL-N RF/INTEGER-N IF DUAL PLL
(V
ELECTRICAL CHARACTERISTICS (Continued)
Charge Pump Outputs: CP
RF Charge Pump Output
Current
IF Charge Pump Output Current
Charge Pump Leakage Current
Sink vs. Source Mismatch
Output Current Magnitude
Variations. Voltage
Output Current vs. Temperature
Operating Frequency, Input Sensitivity (Programmable Divider, PFD)
RF Operating
Frequency
IF Operating Frequency
Reference Oscillator Input
Frequency
Phase Detector Operating
Frequency
RF Input Sensitivity
IF Input Sensitivity
Reference Oscillator Input
Sensitivity
DD
=3.0V, V
Characteristic
p
=3.0V, T
S1M8837
S1M8836
a
= 25 C, unless otherwise specified.)
o
RF, CP
SOURCE_max
SOURCE_max
SOURCE_min
SOURCE_min
I
I
I
CP-SOURCE
CP
I
CP-SINK
CP
Symbol
SINK_max
SINK_max
SINK_min
SINK_min
o
V
P
I
I
I
OSC
I
I
I
I
I
P
CPRF-
CPRF-
CPRF-
f
IF
CPRF
CPRF
CPRF
CPRF
CPRF
I
VS V
f
in
OSCin
fin
f
CPL
in
fin
VS T
PD
RF
IF
RF
IF
in
vs
CP
a
(f
(f
V
V
V
V
osc
osc
CP
CP
CP
CP
RF_CP_WORD=0000
RF_CP_WORD=0000
RF_CP_WORD=1111
RF_CP_WORD=1111
0.5V
0.5V
Fractional-N mode
Fractional-N mode
V
=V
Test Conditions
=V
=V
=V
=19.68MHz, RF R=2)
=19.68MHz, RF R=2)
DD
P
P
P
P
V
V
V
V
V
V
V
V
V
=2.7V to 4.0V
/2,CP_GAIN_8=0
/2,CP_GAIN_8=0
/2,CP_GAIN_8=1
/2,CP_GAIN_8=1
V
V
CP
CP
CP
CP
CP
CP
DD
DD
DD
CP
CP
=V
=V
=V
=V
=3.0V
=3.0V
=4.0V
=V
=V
P
P
P
P
P
P
VP-0.5V
/2,
/2,
/2,
/2,
V
/2
/2
P
-0.5V
Min.
0.25
-2.5
-15
-10
-10
0.5
0.5
45
2
+800
+100
+800
Typ.
-800
-100
-800
+50
-50
10
10
3
Max.
+2.5
V
520
2.5
1.0
10
15
40
10
0
0
0
DD
S1M8836/37
MHz
MHz
MHz
dBm
dBm
dBm
Unit
GHz
GHz
V
nA
%
%
%
PP
A
A
A
A
A
A
A
A
9