BAT14 Infineon Technologies, BAT14 Datasheet
BAT14
Manufacturer Part Number
BAT14
Description
Silicon Schottky Diode
Manufacturer
Infineon Technologies
Datasheet
1.BAT14.pdf
(3 pages)
Silicon Schottky Diode
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Parameter
Diode reverse voltage
Forward current
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
BAT14-03W
Type
BAT14-03W
Maximum Ratings at T
Total power dissipation
T
Junction - soldering point
1
For calculation of R
DBS mixer applications up to 12 GHz
Low noise figure
Low barrier type
S
85 °C
thJA
please refer to Application Note Thermal Resistance
A
1)
= 25°C, unless otherwise specified
Package
SOD323
Configuration
single
1
Symbol
V
I
P
T
T
T
Symbol
R
F
j
op
stg
R
tot
thJS
-55 ... 125
-55 ... 150
Value
Value
100
150
90
690
4
L
1.8
S
(nH)
Feb-03-2003
Marking
O/white
BAT14...
Unit
Unit
V
mA
mW
°C
K/W
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BAT14 Summary of contents
Page 1
... For calculation of R please refer to Application Note Thermal Resistance thJA Package Configuration SOD323 single Symbol tot stg Symbol R thJS 1 BAT14... L Marking (nH) S 1.8 O/white Value Unit 100 mW 150 °C -55 ... 125 -55 ... 150 Value Unit K/W 690 Feb-03-2003 ...
Page 2
... DC Characteristics Breakdown voltage µA (BR) Forward voltage Characteristics Diode capacitance MHz R Differential forward resistance I = 10mA / 50mA F = 25°C, unless otherwise specified A Symbol V (BR BAT14... Values Unit min. typ. max 0.36 0.43 0.52 0.48 0.55 0.66 - 0. Feb-03-2003 ...
Page 3
... V ) Reverse current Parameter A 10 µ 3 -40°C 25°C 85°C 125° 1.5 2 2.5 3 3.5 4 Feb-03-2003 BAT14... =125°C A =85°C A =25° 4.5 5 ...