SF100BA50 SanRex Corporation, SF100BA50 Datasheet

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SF100BA50

Manufacturer Part Number
SF100BA50
Description
Manufacturer
SanRex Corporation
Datasheet

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Part Number:
SF100BA50
Manufacturer:
SANREX
Quantity:
80
Part Number:
SF100BA50
Manufacturer:
TSC
Quantity:
8 600
Part Number:
SF100BA50
Manufacturer:
MOSFET
Quantity:
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Part Number:
SF100BA50
Quantity:
60
SF100BA50 is a isolated power MOSFET module designed for fast swiching
applications of high voltage and current. The mounting base of the module is electrically
isolated from semiconductor elements for simple heatsink construction.
■Maximum Ratings
■Electrical Characteristics
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
Rth ( j-c) Thermal Resistance
(Applications)
Symbol
Symbol
V
(BR) DSS
R
td ( off)
V
td ( on)
V
I
Suitable for high speed switching applications.
Low ON resistance.
Wide Safe Operating Areas.
t
UPS (CVCF) , Motor Control, Switching Power Supply, etc.
Coss
D
rr
V
Crss
V
Tstg
Ciss
V
V
DS (on)
I
I
GS (th)
DS (on)
gfs
=100A, V
I
-I
GSS
DSS
≦700ns
P
trr
DSS
GSS
I
Tj
SDS
DP
tr
tf
ISO
MOSFET MODULE
SF100BA50
D
D
T
Drain-Source Voltage
Gate-Source Voltage
Drain
Current
Source Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Isolation Voltage(R.M.S.)
Mounting
Torque
Mass
Gate Leakage Current
Zero Gate Voltage Drain Current
Darin-Source Breakdown Voltage
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Time
Diode Forward Voltage
Reverse Recovery Time
DSS
=500V
Item
Item
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
DC
Pulse
Mounting (M6)
Terminal(M5)
Duty=43%
Tc=25℃
A.C. 1minute
Recommended Value 2.5∼3.9 (25∼40)
Recommended Value 1.5∼2.5 (15∼25)
Typical Value
V
V
V
V
I
I
V
V
V
V
R
I
−I
−I
D
D
D
GS
GS
GS
DS
DS
GS
GS
GS
L
=50A,V
=50A,V
=50A,R
=6Ω,R
D
D
=V
=10A,I
=±20V,V
=0V,V
=0V,I
=0V,V
=0V,V
=0V,V
=50A,V
=50A,V
GS
,I
D
GS
GS
G
GS
DS
D
DS
DS
DS
=1mA
D
=5Ω
=10mA
=15V
=15V
=50A
GS
GS
=500V
=25V,f=1.0MHz
=25V,f=1.0MHz
=25V,f=1.0MHz
=50Ω,V
DS
Conditions
Conditions
=0V
=0V,di/dt=100A/ μs
=0V
GS
G
=15V
w
q
S
S
(Tj=25℃ unless otherwise specified)
(Tj=25℃ unless otherwise specified)
2- φ6.5
Min.
500
1.0
−40∼+150
−40∼+125
SF100BA50
4.7(48)
2.7(28)
Ratings
Ratings
NAME PLATE
1100
80.5max
52.5max
2500
±20
Typ.
34.0±0.2
65.0±0.2
500
100
200
100
600
160
700
120
280
1
60
70
3
4
2
4.0
2.8×0.8TAB#110
     (depth 10mm)
20000
Max.
UL;E76102 ( M)
±2.0
3800
1500
0.21
1.0
5.0
3.5
1.5
70
Unit:
2-M5
(kgf・B)
℃/W
N・m
Unit
Unit
μA
mA
μs
pF
pF
pF
ns
W
A
A
S
V
V
V
g
V
V
V
V
A

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SF100BA50 Summary of contents

Page 1

... MOSFET MODULE SF100BA50 SF100BA50 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. I =100A, V =500V ● D DSS Suitable for high speed switching applications. ...

Page 2

... Coss 1 0 1 Crss 5 Non-Repetitive 0 1 6 0 2 0 0 2 4 0 1 0 (V) DS SF100BA50 10V VDS Tj 25℃ Pulse Test 3 4 5 Drain-Source Voltage V (V) GS Drain Current Pulse Test Typical ...

Page 3

... Vs. Pulse Width 5 1 0 (sec) W SF100BA50 Max. Max. 50ms−10s 50μs−50ms 2 m 5 m 1 0 m ...

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