GP1600FSS18 Dynex Semiconductor, GP1600FSS18 Datasheet - Page 4

• Manufacturer Part Number: GP1600FSS18
• Description: Single Switch Igbt Module
• Manufacturer: Dynex Semiconductor

GP1600FSS18
ELECTRICAL CHARACTERISTICS
T
T
case
case
4/9
Symbol
Symbol
= 25˚C unless stated otherwise
= 125˚C unless stated otherwise
E
E
E
E
t
t
t
t
E
E
Q
d(off)
d(on)
Q
d(off)
d(on)
I
I
OFF
t
REC
OFF
t
REC
t
t
ON
ON
rr
rr
r
f
r
f
rr
rr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
Parameter
I
I
F
F
= 1600A, V
= 1600A, V
R
R
G(ON)
G(ON)
dI
Test Conditions
dI
Test Conditions
F
F
/dt = 5000A/ s
/dt = 6000A/ s
V
V
V
V
I
= R
L ~ 50nH
I
= R
L ~ 50nH
C
GE
CE
C
GE
CE
= 1600A
= 1600A
= 900V
= 900V
= 15V
= 15V
G(OFF)
G(OFF)
R
R
= 50% V
= 50% V
= 2.2
= 2.2
CES
CES
,
,
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.dynexsemi.com
1700
1500
Typ.
Typ.
200
650
500
350
600
550
850
320
200
500
400
300
450
300
750
200
Max.
1900
Max.
1650
330
800
700
500
800
650
300
650
550
450
650
400
-
-
-
-
Units
Units
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
A
C
C