GP1200FSM18 Dynex Semiconductor, GP1200FSM18 Datasheet - Page 5

• Manufacturer Part Number: GP1200FSM18
• Description: Hi-reliability Single Switch Igbt Module
• Manufacturer: Dynex Semiconductor

TYPICAL CHARACTERISTICS
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1800
1600
1000
2400
2200
2000
1400
1200
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
800
Fig. 5 Typical switching energy vs collector current
600
400
200
0
0
0
0
T
V
V
R
L = 50nH
Common emitter
T
case
GE
CE
G
case
= 2.2Ω
Fig. 3 Typical output characteristics
= 900V
= 15V
= 125˚C
1.0
200
= 25˚C
Collector-emitter voltage, V
2.0
Collector current, I
400
3.0
600
4.0
C
E
- (A)
800
OFF
ce
V
5.0
ge
- (V)
= 20/15/12V
1000
E
ON
V
6.0
ge
E
= 10V
REC
1200
7.0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
1800
1000
2400
2200
2000
1600
1400
1200
800
600
200
400
Fig. 6 Typicalswitching energy vs gate resistance
0
0
0
0
T
V
V
I
L = 50nH
C
Common emitter
T
case
GE
CE
case
= 1200A
1
1.0
Fig. 4 Typical output characteristics
= 900V
= 15V
= 125˚C
= 125˚C
2
2.0
Collector-emitter voltage, V
Gate resistance, R
E
3
3.0
OFF
4
4.0
5
5.0
G
V
6.0
6
- (Ohms)
ge
GP1200FSM18
= 20/15/12V
ce
7.0
7
- (V)
8.0
8
V
E
ge
ON
E
9.0 10.0
9
= 10V
REC
10
5/9