BAT85AMO Philips Semiconductors (Acquired by NXP), BAT85AMO Datasheet - Page 3

• Manufacturer Part Number: BAT85AMO
• Description: BAT85; Schottky Barrier Diode;; Package: SOD68 (DO-34)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Refer to SOD68 standard mounting conditions.
2000 May 25
V
I
t
C
R
SYMBOL
SYMBOL
amb
R
rr
F
d
th j-a
Schottky barrier diode
= 25 C; unless otherwise specified.
forward voltage
reverse current
reverse recovery time
diode capacitance
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
V
when switched from I
I
measured at I
f = 1 MHz; V
note 1
3
R
R
I
I
I
I
I
= 10 mA; R
F
F
F
F
F
= 25 V; see Fig.4
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
CONDITIONS
CONDITIONS
R
L
R
= 1 V; see Fig.5
= 100 ;
= 1 mA; see Fig.6
F
= 10 mA to
240
320
400
500
800
2
4
10
Product specification
VALUE
MAX.
320
BAT85
mV
mV
mV
mV
mV
ns
pF
A
UNIT
UNIT
K/W