BAS140WE6327 Infineon Technologies Corporation, BAS140WE6327 Datasheet
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BAS140WE6327
Manufacturer Part Number
BAS140WE6327
Description
Silicon Schottky Diode
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BAS140WE6327.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAS140WE6327
Manufacturer:
Infineon
Quantity:
4 800
Silicon Schottky Diode
Type
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Surge forward current, t
Total power dissipation,
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
BAS140W
Junction - soldering point
1
For calculation of R
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detection mixing
thJA
please refer to Application Note Thermal Resistance
1)
1 0 ms
113 °C
Marking
4
1 = C
1
Symbol
V
I
I
P
T
T
T
Symbol
R
Pin Configuration
F
FSM
j
op
stg
R
tot
thJS
2 = A
1
-
-55 ... 125
-55 ... 150
Value
Value
120
200
250
150
40
1 50
2
Package
Aug-23-2001
SOD323
BAS140W
VPS05176
Unit
Unit
V
mA
mW
°C
K/W
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BAS140WE6327 Summary of contents
Page 1
Silicon Schottky Diode General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detection mixing Type BAS140W Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current Total power dissipation, ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage (BR) Reverse current Forward voltage ...
Page 3
Diode capacitance 1MHz BAS 40W/BAS 140W Reverse current Parameter A BAS 40W/BAS 140W ...
Page 4
Forward current °C A BAS 40W/BAS 140W -40 ˚ ˚C 85 ˚ Permissible Puls ...