BAV70E6433 Infineon Technologies Corporation, BAV70E6433 Datasheet - Page 3

• Manufacturer Part Number: BAV70E6433
• Description: Silicon Switching Diode Array
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
DC Characteristics
Breakdown voltage
I
Reverse current
V
V
V
AC Characteristics
Reverse recovery time
I
R
Test circuit for reverse recovery time
Forward voltage
I
I
I
I
I
Diode capacitance
V
(BR)
F
F
F
F
F
F
R
R
R
L
R
= 10 mA, I
= 1 mA
= 10 mA
= 50 mA
= 100 mA
= 150 mA
= 70 V
= 25 V, T
= 70 V, T
= 100
= 0 V, f = 1 MHz
= 100 µA

A
A
R
= 150 °C
= 150 °C
= 10 mA, measured at I
F
D.U.T.
Oscillograph
A
= 25°C, unless otherwise specified
EHN00019
R
= 1mA ,
Pulse generator: t
Oscillograph: R = 50
3
Symbol
V
I
C
t
V
R
rr
(BR)
T
F
R
p
i
min.
= 100ns, D = 0.05, t
= 50
85
 
-
-
-
-
-
-
-
-
-
-
t
r

= 0.35ns, C = 0.05pF
Values
typ.
-
-
-
-
-
-
-
-
-
-
-
max.
1000
1200
1250
0.15
715
855
Feb-21-2003
1.5
30
50
4
-
BAV70...
r
= 0.6ns,
Unit
µA
ns
V
mV
pF