1SS400T/R13 ON Semiconductor, 1SS400T/R13 Datasheet - Page 2

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1SS400T/R13

Manufacturer Part Number
1SS400T/R13
Description
High−speed Switching Diode
Manufacturer
ON Semiconductor
Datasheet
+10 V
100
1.0
0.1
10
50 W OUTPUT
GENERATOR
0.2
PULSE
820 W
0.1 mF
0.4
Figure 2. Forward Voltage
V
2.0 k
100 mH
F
T
, FORWARD VOLTAGE (VOLTS)
A
= 85°C
0.6
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
I
F
DUT
0.68
0.64
0.60
0.56
0.52
2. Input pulse is adjusted so I
3. t
0.8
Figure 1. Recovery Time Equivalent Test Circuit
p
0
T
» t
A
rr
= 25°C
0.1 mF
OSCILLOSCOPE
T
A
50 W INPUT
SAMPLING
1.0
= −40°C
2.0
V
http://onsemi.com
R
Figure 4. Capacitance
, REVERSE VOLTAGE (VOLTS)
1SS400T1
1.2
R(peak)
V
2
R
4.0
0.001
0.01
1.0
0.1
t
10
r
is equal to 10 mA.
INPUT SIGNAL
10%
90%
0
t
p
6.0
10
Figure 3. Leakage Current
t
V
R
, REVERSE VOLTAGE (VOLTS)
T
T
T
T
T
8.0
A
A
A
A
A
20
F
) of 10 mA.
= 150°C
= 125°C
= 85°C
= 55°C
= 25°C
I
I
R
F
(I
F
30
= I
at i
R
OUTPUT PULSE
= 10 mA; MEASURED
R(REC)
t
rr
i
R(REC)
= 1.0 mA)
40
= 1.0 mA
t
50

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