1N5059AMO Philips Semiconductors (Acquired by NXP), 1N5059AMO Datasheet
1N5059AMO
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1N5059AMO Summary of contents
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DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 1996 Jun 19 ...
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Philips Semiconductors Controlled avalanche rectifiers FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V ...
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Philips Semiconductors Controlled avalanche rectifiers ELECTRICAL CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V forward voltage F V reverse avalanche (BR)R breakdown voltage 1N5059 1N5060 1N5061 1N5062 I reverse current R t reverse recovery time when ...
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Philips Semiconductors Controlled avalanche rectifiers GRAPHICAL DATA 3 handbook, halfpage I F(AV) ( 1.57 0.5. R RRMmax Lead length 10 mm. Fig.2 Maximum permissible average forward current ...
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Philips Semiconductors Controlled avalanche rectifiers 15 handbook, halfpage Solid line Dotted line 175 C. j Fig.6 Forward current as a function of forward voltage; maximum ...
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Philips Semiconductors Controlled avalanche rectifiers handbook, full pagewidth DUT + Input impedance oscilloscope pF; t Source impedance ns. r Fig.10 Test circuit and reverse recovery time waveform and ...
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Philips Semiconductors Controlled avalanche rectifiers PACKAGE OUTLINE handbook, full pagewidth 3.81 max Dimensions in mm. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; ...