BUT34 Motorola Semiconductor Products, BUT34 Datasheet - Page 4

• Manufacturer Part Number: BUT34
• Description: 50 Amperes NPN Silicon Power Darlington Transistor 850 Volts 250 Watts
• Manufacturer: Motorola Semiconductor Products

BUT34
4
0.5
0.3
0.2
0.1
15
10
10
5
3
2
1
8
6
5
4
3
2
1
L coil = 10 mH, V CC = 10 V
R coil = 0.7
V clamp = V CEO(sus)
0
I C = 50 A
SEE ABOVE FOR
DETAILED CONDITIONS
5 V
Figure 8. Storage Time versus Forced Gain
PW Varied to Attain
I C = 100 mA
1
1
T C = 25 C
V BE(off) = 5 V
V CEO(sus)
Figure 6. Fall Time versus IB2/IB1
20
2
2
INPUT
1
2
INDUCTIVE TEST CIRCUIT
TUT
3
3
1
2
EQUIVALENT
I C = 25 A
4
4
f , FORCED GAIN
1N4937
V clamp
0.1
RS =
OR
Ib2/Ib1
L coil = 180 H
R coil = 0.05
V CC = 10 V
5
PULSES
5
= 3%
Table 1. Test Conditions for Dynamic Performance
6
6
V CC
R coil
L coil
680 pF
7
7
220
T C = 25 C
I C /I B = 5
RBSOA AND INDUCTIVE SWITCHING
8
I C = 25 A
8
I C = 50 A
100
100
I C
V CE
9
9
MM3735
2N3763
OUTPUT WAVEFORMS
I CM
V CEM
10
10
TIME
2 W
2 W
33
33
D1 D2 D3 D4
t 1
680 pF
680 pF
160
160
t f
D1
D3
t 2
1N4934
0.5
0.3
0.2
0.1
10
t f Clamped
V clamp
5
4
3
2
1
8
6
5
4
3
2
1
22 F
22 F
t
22
22
1
D3
D4
I C = 50 A
Motorola Bipolar Power Transistor Device Data
I C = 16 A
t
1
2N6438
2N6339
1 F
Figure 9. Storage Time versus Ib2/Ib1
Figure 7. Turn–Off Time versus I C
2
t 1 Adjusted to
Obtain I C
t 1
t 2
2
Test Equipment
Scope — Tektronix
475 or Equivalent
dT b ADJUST
[
[
I b1 ADJUST
I b2 ADJUST
dT
I C , COLLECTOR CURRENT (AMPS)
t F = 200 ns
t S = 400 ns
MR854
MR854
+10 V
V CC
3
L coil (I CM )
L coil (I CM )
I C = 25 A
3
V clamp
V CC
4
5
Ib2/Ib1
7
5
CRONETICS
PG130
up to
50 V
t S
V BE(off) = 5 V
10
6
DRIVER
TEST CIRCUIT
FREE–WHEEL
5 s
7
DIODE
1%
for
10 V
t F
10 V
20
V BE(off) = 5 V
+
–
510
T C = 25 C
I C /I B = 5
8
T C = 25 C
I C /I B = 20
30
I C /I B = 10
up to
50 V
9
AV
V D
V D
I D
I D
10
50