1N5820S EIC discrete Semiconductors, 1N5820S Datasheet - Page 2

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1N5820S

Manufacturer Part Number
1N5820S
Description
SCHOTTKY BARRIER RECTIFIER DIODES
Manufacturer
EIC discrete Semiconductors
Datasheet
2.4
1.8
1.2
0.6
20
10
FIG.1 - FORWARD CURRENT DERATING CURVE
3.0
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
1.0
0
0.1
0.1
0
RATING AND CHARACTERISTIC CURVES ( 1N5820S - 1N5822S )
0.2
20
1N5820S
FORWARD VOLTAGE, VOLTS
LEA D TEMPERATURE, ( C)
0.3
40
0.4
60
0.5
0.6
1N5821S
80
T
PULSE WIDTH = 300 s
DUTY CYCLE = 1%
J
0.7
= 25 C
100
0.8
1N5822S
120
0.9
1.0
140
1.1
0.01
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
10
1.0
80
60
40
20
0
0.1
0
1
FORWARD SURGE CURRENT
PERCENT OF RATED REV ERSE
NUMBER OF CYCLES A T 60Hz
2
20
40
4
VOLTAGE, (%)
6
60
10
T
80
20
T
J
J
= 100 C
= 25 C
100
40 60 100
120
140

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