MB84VA2003 Fujitsu Media Devices, MB84VA2003 Datasheet - Page 26
MB84VA2003
Manufacturer Part Number
MB84VA2003
Description
(MB84VA2002 / MB84VA2003) 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
Manufacturer
Fujitsu Media Devices
Datasheet
1.MB84VA2003.pdf
(29 pages)
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26
MB84VA2002
Parameter
Sector Erase Time
Byte Programming Time
Chip Programming Time
Erase/Program Cycle
* : 5 A (Max.) at T
Symbol
• CE1s Controlled Data Retention Mode (Note 1)
ERASE AND PROGRAMMING PERFORMANCE
DATA RETENTION CHARACTERISTICS
I
t
V
DDS2
CDR
t
DH
R
GND
V
2.7 V
V
CC
IH
s
Parameter
CE1s
Data Retention Supply Voltage
Standby Current
Chip Deselect to Data Retention Mode Time
Recovery Time
A
= –20°C to +40°C
See Note 2
-10
t
CDR
Parameter Description
/MB84VA2003
100,000
Min.
—
—
—
Limits
Typ.
DATA RETENTION MODE
12
—
1
8
(SRAM)
V
CCS
–0.2 V
3,600
T.B.D
Max.
V
V
15
—
DH
DH
-10
(Flash)
= 3.0 V
= 3.6 V
cycles
Unit
sec
sec
s
Min.
2.0
—
—
0
5
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
See Note 2
Typ.
—
—
—
—
—
t
R
Comment
Max.
50*
3.6
60
—
—
Unit
ms
ns
V
A
A
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