CM1800 Mitsubishi Electronics America, Inc., CM1800 Datasheet - Page 6

• Manufacturer Part Number: CM1800
• Description: HIGH Power Switching USE Insulated TYPE
• Manufacturer: Mitsubishi Electronics America, Inc.

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
10
10
10
1.2
1.0
0.8
0.6
0.4
0.2
-1
-2
0
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
10
-3
2
V
R
T
Single Pulse, T
R
R
j
SWITCHING TIME CHARACTERISTICS
CC
th(j–c)Q
th(j–c)R
2 3 5 7
G(on)
= 125 C, Inductive load
IMPEDANCE CHARACTERISTICS
= 850V, V
2
= 0.9 , R
COLLECTOR CURRENT ( A )
= 28K/kW
= 12.5K/kW
3
10
TRANSIENT THERMAL
-2
t
t
d(off)
d(on)
2 3 5 7
HALF-BRIDGE
GE
5
C
G(off)
( TYPICAL )
= 25 C
= 15V
TIME ( s )
7
10
10
= 2.2
3
-1
2 3 5 7
2
3
10
0
t
t
r
f
2 3 5 7
5
7
10
10
4
1
5000
4000
3000
2000
1000
600
500
400
300
200
100
0
0
0
0
REVERSE RECOVERY CHARACTERISTICS
V
R
T
V
T
REVERSE BIAS SAFE OPERATING AREA
CC
j
CC
j
G(on)
= 125 C, Inductive load
= 125 C, R
COLLECTOR-EMITTER VOLTAGE ( V )
600
= 850V, V
1200V, V
= 0.9
Module
Chip
500
EMITTER CURRENT ( A )
FREE-WHEEL DIODE
1200
MITSUBISHI HVIGBT MODULES
G(off)
HIGH POWER SWITCHING USE
GE
GE
( TYPICAL )
( RBSOA )
= 15V
= +/-15V
1800
1000
2.2
CM1800HC-34N
2400
1500
INSULATED TYPE
3000
Q
rr
3600
2000
Jul. 2005