CM600HU-24 Mitsubishi Electronics America, Inc., CM600HU-24 Datasheet - Page 2

• Manufacturer Part Number: CM600HU-24
• Description: Igbt Modules High Power Switching Use Insulated Type
• Manufacturer: Mitsubishi Electronics America, Inc.

Absolute Maximum Ratings, T
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
Peak Collector Current (T
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M8 Main Terminal
Mounting Torque, M6 Mounting
Mounting Torque, M4 Terminal
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage*
* Pulse width and repetition rate should be such that the device junction temperature (T
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
c
c
= 25 C)
= 25 C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
150 C)
c
= 25 C)
j
= 25 C unless otherwise specified
j
R
V
R
= 25 C unless otherwise specified
Symbol
V
Symbol
Symbol
R
CE(sat)
t
t
th(j-c)
th(j-c)
I
I
C
GE(th)
V
C
C
d(on)
d(off)
CES
GES
th(c-f)
Q
Q
j
t
oes
EC
res
t
t
ies
rr
G
r
f
rr
= 25 C unless otherwise specified
Q
D
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
I
C
CC
C
I
I
= 600A, V
E
E
= 600A, V
Load Switching Operation
= 600V, I
= 600A, di
= 600A, di
V
V
V
I
C
V
CC
CE
GE
I
V
R
E
CE
GE1
G
Per FWDi Module
= 60mA, V
Per IGBT Module
= 600A, V
= V
= V
= 600V, I
= 2.1 , Resistive
= 10V, V
Test Conditions
Test Conditions
Test Conditions
GE
= V
C
GE
CES
GES
E
E
j
= 600A, V
j
) does not exceed T
) does not exceed T
Symbol
= 15V, T
GE2
/dt = -1200A/ s
/dt = -1200A/ s
V
V
= 15V, T
V
T
I
I
, V
, V
CES
GES
CM
EM
P
I
T
I
stg
–
–
–
–
iso
CE
C
C
E
GE
GE
c
j
GE
CE
= 600A,
= 15V,
= 10V
= 0V
= 0V
= 0V
= 0V
j
j
GE
= 125 C
= 25 C
= 15V
j(max)
j(max)
HIGH POWER SWITCHING USE
rating.
rating.
Min.
Min.
Min.
-40 to 150
-40 to 125
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
MITSUBISHI IGBT MODULES
8.8~10.8
Ratings
3.5~4.5
1.3~1.7
1200*
1200*
1200
3100
2500
600
600
600
20
2250
CM600HU-24H
Typ.
Typ.
Typ.
–
–
6
2.9
2.85
–
–
–
–
–
–
–
–
–
3.3
–
–
0.015
INSULATED TYPE
300
700
450
350
300
90
31.5
18
Max.
Max.
Max.
0.5
7.5
3.7
3.2
–
0.04
2
–
–
0.06
–
Amperes
Amperes
Amperes
Amperes
Grams
Watts
N · m
N · m
N · m
Units
Vrms
Units
Units
Units
Volts
Volts
Sep.2000
Volts
Volts
Volts
Volts
C
C
mA
C/W
C/W
C/W
nC
nF
nF
nF
ns
ns
ns
ns
ns
A
C