BUV47A Bourns Electronic Solutions, BUV47A Datasheet

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BUV47A

Manufacturer Part Number
BUV47A
Description
NPN SILICON POWER TRANSISTORS
Manufacturer
Bourns Electronic Solutions
Datasheet

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DataSheet U .com
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
4
Collector-emitter voltage (V
Collector-emitter voltage (R
Collector-emitter voltage (I
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
R O D U C T
Rugged Triple-Diffused Planar Construction
9 A Continuous Collector Current
1000 Volt Blocking Capability
1: This value applies for t
B
I N F O R M A T I O N
BE
BE
= 0)
= -2.5 V)
= 10 Ω)
p
≤ 5 ms, duty cycle ≤ 2%.
RATING
C
B
E
Pin 2 is in electrical contact with the mounting base.
NPN SILICON POWER TRANSISTORS
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
SOT-93 PACKAGE
(TOP VIEW)
SYMBOL
V
V
V
T
I
I
P
CER
CEO
CEX
I
CM
BM
1
2
3
I
T
stg
C
B
tot
j
BUV47, BUV47A
-65 to +150
-65 to +150
VALUE
1000
1000
850
850
400
450
120
15
9
3
6
MDTRAAA
UNIT
°C
°C
W
V
V
V
A
A
A
A
1

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BUV47A Summary of contents

Page 1

... AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 4 DataSheet U .com RATING = -2 Ω) ≤ 5 ms, duty cycle ≤ 2%. p BUV47, BUV47A NPN SILICON POWER TRANSISTORS SOT-93 PACKAGE (TOP VIEW Pin electrical contact with the mounting base. ...

Page 2

... BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter V CEO(sus) sustaining voltage Base-emitter V (BR)EBO breakdown voltage Collector-emitter I CES cut-off current Collector-emitter I CER cut-off current Emitter cut-off I EBO current Collector-emitter V CE(sat) saturation voltage ...

Page 3

... V 1 100 Ω 82 Ω BD136 Figure 1. Resistive-Load Switching Test Circuit C 90 10% 90 10% Figure 2. Resistive-Load Switching Waveforms BUV47, BUV47A NPN SILICON POWER TRANSISTORS µ 680 F 100 Ω 250 V CC µ 100 F TUT µ 680 F 90% E ...

Page 4

... BUV47, BUV47A NPN SILICON POWER TRANSISTORS V Gen 68 Ω 270 Ω Adjust pw to obtain I For I < ≥ For NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics ...

Page 5

... T = 100° 1·0 1·5 2·0 2·5 BUV47, BUV47A NPN SILICON POWER TRANSISTORS COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 5·0 4·0 3·0 2·0 1· 0·5 1·0 1· Base Current - A B Figure 6. COLLECTOR CUT-OFF CURRENT ...

Page 6

... BUV47, BUV47A NPN SILICON POWER TRANSISTORS 6 4 DataSheet U .com MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 10 1·0 0.1 = 100 µ BUV47 p DC Operation BUV47A 0·01 1·0 10 100 V - Collector-Emitter Voltage - V CE Figure 9. THERMAL INFORMATION ...

Page 7

... NOTE A: The centre pin is in electrical contact with the mounting tab AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 4 DataSheet U .com MECHANICAL DATA 15,2 14,7 16,2 MAX. 31,0 TYP. 18,0 TYP 11,1 10,8 ALL LINEAR DIMENSIONS IN MILLIMETERS BUV47, BUV47A NPN SILICON POWER TRANSISTORS 4,90 4,70 1,37 3,95 1,17 4,15 2,50 TYP. 0,78 0,50 MDXXAW 7 ...

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