CT20VSL-8 Mitsubishi Electric Semiconductor, CT20VSL-8 Datasheet

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CT20VSL-8

Manufacturer Part Number
CT20VSL-8
Description
STROBE FLASHER USE
Manufacturer
Mitsubishi Electric Semiconductor
Datasheet
APPLICATION
Strobe Flasher.
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
V
V
V
I
T
T
V
I
I
V
CT20VSL-8
¡V
¡I
CM
CES
GES
Symbol
Symbol
CES
GES
GEM
j
stg
(BR)CES
GE(th)
CM ...................................................................................
CES ...............................................................................
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Parameter
Parameter
(Tc = 25 C)
(Tj = 25 C)
V
V
V
See figure 1
I
V
V
V
C
GE
CE
CE
CE
GE
CE
= 1mA, V
= 0V
= 0V, See notice 4
= 0V, tw = 10s
= 400V, V
= 16V, V
= 10V, I
GE
C
GE
= 1mA
CE
= 0V
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
= 0V
= 0V
Test conditions
Conditions
400V
130A
OUTLINE DRAWING
r
q
1
q w e
10.5MAX.
CT20VSL-8
5
w r
e
STROBE FLASHER USE
Min.
450
0.5
TO-220S
0.8
–40 ~ +150
–40 ~ +150
Ratings
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
Limits
400
130
Typ.
15
16
Dimensions in mm
4.5
Max.
0.5
2.0
10
0.1
1.3
0
Feb.1999
+0.3
–0
Unit
Unit
V
V
V
A
V
V
C
C
A
A

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CT20VSL-8 Summary of contents

Page 1

... MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR OUTLINE DRAWING 400V 130A Conditions = 0V = 0V, See notice 10s Test conditions = 1mA 400V 16V 10V 1mA C CT20VSL-8 STROBE FLASHER USE Dimensions in mm 10.5MAX. 4.5 1.3 +0.3 0 –0 5 0.5 0 GATE w COLLECTOR e EMITTER r COLLECTOR e TO-220S Ratings Unit 400 V ...

Page 2

... Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours. MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR C = 400 (V) GE TRIGGER SIGNAL IGBT GATE V CM VOLTAGE – Xe TUBE CURRENT =400 F). M CT20VSL-8 STROBE FLASHER USE Vtrig V G Ixe Feb.1999 ...

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