CT20VM-8 Mitsubishi Electric Semiconductor, CT20VM-8 Datasheet
CT20VM-8
Manufacturer Part Number
CT20VM-8
Description
STROBE FLASHER USE
Manufacturer
Mitsubishi Electric Semiconductor
Datasheet
1.CT20VM-8.pdf
(2 pages)
APPLICATION
Strobe Flasher.
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
V
V
V
I
T
T
V
I
I
V
CT20VM-8
¡V
¡I
CM
CES
GES
Symbol
Symbol
CES
GES
GEM
j
stg
(BR)CES
GE(th)
CM ...................................................................................
CES ...............................................................................
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Parameter
Parameter
(Tc = 25 C)
(Tj = 25 C)
V
V
V
See figure 1
I
V
V
V
C
GE
CE
CE
CE
GE
CE
= 1mA, V
= 0V
= 0V, See notice 4
= 0V, tw = 0.5s
= 400V, V
= 40V, V
= 10V, I
GE
C
GE
= 1mA
CE
= 0V
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
= 0V
= 0V
Test conditions
Conditions
400V
130A
OUTLINE DRAWING
r
q
1
0.5
2.5
q
10.5MAX.
w
w r
e
CT20VM-8
STROBE FLASHER USE
e
Min.
450
2.5
—
—
—
TO-220C
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
–40 ~ +150
–40 ~ +150
Ratings
Limits
400
130
Typ.
—
—
—
—
30
40
Dimensions in mm
1.3
Max.
7.0
10
—
0.5
0.1
Feb.1999
Unit
Unit
V
V
V
A
V
V
C
C
A
A
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CT20VM-8 Summary of contents
Page 1
... OUTLINE DRAWING r 1 0.5 2.5 q 400V 130A Conditions = 0V = 0V, See notice 0.5s Test conditions = 1mA 400V 40V 10V 1mA C CT20VM-8 STROBE FLASHER USE Dimensions in mm 10.5MAX. 1.3 0.5 2 GATE w COLLECTOR e EMITTER r COLLECTOR e TO-220C Ratings Unit 400 130 A – ...
Page 2
... GE TRIGGER SIGNAL IGBT GATE V CM VOLTAGE – Xe TUBE CURRENT =800 F). M CT20VM-8 STROBE FLASHER USE V = 350V CM < T 70° > V 28V 100 120 140 160 PULSE COLLECTOR CURRENT I (A) CP Figure 2 Vtrig V ...