CT20ASJ-8 Mitsubishi Electric Semiconductor, CT20ASJ-8 Datasheet

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CT20ASJ-8

Manufacturer Part Number
CT20ASJ-8
Description
STROBE FLASHER USE
Manufacturer
Mitsubishi Electric Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CT20ASJ-8
Manufacturer:
MIT
Quantity:
30 000
Part Number:
CT20ASJ-8-T13
Manufacturer:
MIT
Quantity:
3 000
APPLICATION
Strobe Flasher.
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
V
V
V
I
T
T
V
I
I
V
CT20ASJ-8
¡V
¡I
¡Drive Voltage
¡Small Package
CM
CES
GES
Symbol
Symbol
CES
GES
GEM
j
stg
(BR)CES
GE(th)
CM ....................................................................................
CES ...............................................................................
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Parameter
Parameter
(Tc = 25 C)
V
MP-3
GE
(Tj = 25 C)
=4V
V
See figure 1
I
V
V
V
C
GE
CE
GE
CE
= 1mA, V
= 0V
= 400V, V
= 6V, V
= 10V, I
GE
C
CE
GE
= 1mA
= 0V
= 0V
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
= 0V
Test conditions
Conditions
400V
130A
OUTLINE DRAWING
0.9MAX.
q
1
2.3
4
5.0 ± 0.2
CT20ASJ-8
6.5
2
STROBE FLASHER USE
2.3
1.0
Min.
450
w r
e
3
MP-3
–40 ~ +150
–40 ~ +150
Ratings
Limits
400
130
Typ.
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
6
8
Dimensions in mm
0.5 ± 0.2
Max.
1.5
10
0.1
0.8
0.5 ± 0.1
Feb.1999
Unit
Unit
V
V
V
A
V
V
C
C
A
A

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CT20ASJ-8 Summary of contents

Page 1

... V GE(th) CE MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR OUTLINE DRAWING 0.9MAX. q 400V 130A Conditions = 0V Test conditions = 1mA 400V 6V 10V 1mA C CT20ASJ-8 STROBE FLASHER USE Dimensions in mm 6.5 0.5 ± 0.1 5.0 ± 0.2 4 1.0 0.5 ± 0.2 2.3 2.3 0 GATE w COLLECTOR e EMITTER r COLLECTOR e MP-3 Ratings Unit 400 ...

Page 2

... Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours. MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR C = 400 F M 70° (V) GE TRIGGER SIGNAL IGBT GATE V CM VOLTAGE – Xe TUBE CURRENT =400 F). M CT20ASJ-8 STROBE FLASHER USE Vtrig V G Ixe Feb.1999 ...

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