P12NB30 ST Microelectronics, P12NB30 Datasheet - Page 3

• Manufacturer Part Number: P12NB30
• Description: Search ---> STP12NB30
• Manufacturer: ST Microelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Symb ol
Symb ol
Symb ol
V
I
t
SDM
t
I
r(Vof f)
SD
Q
d(on)
Q
I
Q
RRM
Q
SD
t
t
t
t
rr
r
gs
gd
f
c
rr
g
( )
( )
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
V
V
R
I
I
V
SD
SD
DD
DD
DD
DD
G
G
= 4.7
= 4.7
= 12 A
= 12 A
= 150 V
= 240 V
=240 V
= 100 V
Test Cond ition s
Test Cond ition s
Test Cond ition s
V
di/dt = 100 A/ s
V
I
D
GS
GS
I
I
V
D
D
T
=12A V
GS
j
= 6 A
=12 A
= 10 V
= 0
= 150
= 10 V
GS
o
C
= 10 V
Min.
Min.
Min.
Typ .
Typ .
Typ .
250
20
10
29
11
12
10
10
20
16
2
STP12NB30/FP
Max.
Max.
Max.
1.5
28
14
40
14
14
28
12
48
Un it
Un it
Un it
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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