IRG4PC50S IRF, IRG4PC50S Datasheet - Page 5

• Manufacturer Part Number: IRG4PC50S
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: IRF

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Fig. 9 - Typical Switching Losses vs. Gate
10.0
9.5
9.0
8.5
8000
6000
4000
2000
0
0

V
V
T
Fig. 7 - Typical Capacitance vs.
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 25 C
= 480V
= 15V
= 41A
R
V
10
R
G
CE
G
°
, Gate Resistance ( Ω )
, Gate Resistance (Ohm)

V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes

C oes
C ies
C res
=
=
=
=
20


0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
50
100
100
10
20
16
12
1
8
4
0
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
0


R
V
V
V
I
GE
CC
Fig. 8 - Typical Gate Charge vs.
G
CC
C
= 15V
= 480V
= Ohm
= 400V
= 41A
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
5.0Ω
Junction Temperature
40
Q , Total Gate Charge (nC)
J
G
0
IRG4PC50S
20
80
40
60
120
80 100 120 140 160

I =

I =

I =
C
C
C
160
°
20.5
82
41
A
A
A
200
5