CM25MD-24H Mitsubishi Electric Semiconductor, CM25MD-24H Datasheet - Page 4

• Manufacturer Part Number: CM25MD-24H
• Description: MEDIUM POWER SWITCHING USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

PERFORMANCE CURVES
10
10
10
50
40
30
20
10
COLLECTOR-EMITTER VOLTAGE V
0
5
4
3
2
1
0
2
7
5
3
2
1
7
5
3
2
0
EMITTER-COLLECTOR VOLTAGE V
1.0
0
0
COLLECTOR-EMITTER SATURATION
T
T
V
V
j
j
FORWARD CHARACTERISITICS
GE
= 25 C
1
VOLTAGE CHARACTERISTICS
= 25 C
GE
COLLECTOR CURRENT I
OUTPUT CHARACTERISTICS
= 15V
1.5
10
= 20
T
T
2
(V)
j
j
FREE-WHEEL DIODE
= 25 C
= 125 C
3
(TYPICAL)
15
(TYPICAL)
(TYPICAL)
2.0
20
4
5
2.5
30
6
7
3.0
C
40
8
(A)
12
11
10
9
8
9
CE
EC
7
3.5
(V)
10
50
(V)
10
10
10
10
50
40
30
20
10
10
–1
COLLECTOR-EMITTER VOLTAGE V
0
9
8
7
6
5
4
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
0
0
3 5 7
COLLECTOR-EMITTER SATURATION
V
V
T
GATE-EMITTER VOLTAGE V
GATE-EMITTER VOLTAGE V
CE
GE
TRANSFER CHARACTERISTICS
j
2
VOLTAGE CHARACTERISTICS
2
= 25 C
= 10V
= 0V
MEDIUM POWER SWITCHING USE
10
4
4
CAPACITANCE VS. V
0
2 3 5 7
6
6
MITSUBISHI IGBT MODULES
(TYPICAL)
(TYPICAL)
(TYPICAL)
8
8
10
10
10
1
12 14 16 18
12 14 16 18
CM25MD-24H
2 3
C
I
C
res
T
T
= 50A
I
I
C
C
INSULATED TYPE
C
C
5 7
j
j
ies
oes
= 25 C
= 125 C
CE
= 25A
= 10A
GE
GE
10
(V)
(V)
2
CE
2 3
20
20
(V)
Feb.1999