STGB3NB60FD ST Microelectronics, STGB3NB60FD Datasheet - Page 2

• Manufacturer Part Number: STGB3NB60FD
• Description: (STGP3NB60F / STGD3NB60F / STGF3NB60FD / STGB3NB60FD) N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH IGBT
• Manufacturer: ST Microelectronics

STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) For “D” version only
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
MAIN PARAMETERS
2/14
Symbol
Rthj-case
I
Rthj-amb
V
I
Symbol
V
V
CM
P
V
fm
V
I
V
V
Rthc-h
T
BR(CES)
f
ECR
CES
TOT
I
I
T
I
CE(sat)
ISO
I
stg
GE(th)
GE
(1)
C
C
CES
GES
(1)
j
( )
Collector-Emitter Voltage (V
Emitter-Collector Voltage
Gate-Emitter Voltage
Collector Current (continuous) at T
Collector Current (continuous) at T
Collector Current (pulsed)
Forward Current
Forward Current Pulsed
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage A.C.
Storage Temperature
Max. Operating Junction Temperature
Collector-Emitter Breakdown
Voltage
Collector cut-off
(V
Gate-Emitter Leakage
Current (V
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
GE
= 0)
Parameter
CE
= 0)
C
Parameter
= 25°C
GS
= 0)
CASE
C
C
I
V
V
V
V
V
V
C
CE
CE
GE
CE
GE
GE
= 25°C
= 100°C
= 250 µA, V
= 25°C UNLESS OTHERWISE SPECIFIED)
= Max Rating, T
= Max Rating, T
= V
= ±20V , V
= 15 V, I
= 15 V, I
Test Conditions
GE
, I
C
C
C
GE
= 250 µA
= 3 A
= 3 A, Tj =125°C
CE
= 0
= 0
C
C
TO-220/D
TO-220/D
= 25°C
= 125°C
0.55
1.8
68
--
2
2
PAK
PAK
62.5
Min.
600
– 55 to 150
3
TO-220FP
Value
TO-220FP
600
±20
150
0.5
20
24
24
6
3
3
2500
5
0.2
25
Typ.
1.9
1.6
DPAK
DPAK
100
2.1
0.47
Max.
±100
100
60
2.4
--
50
5
W/°C
°C/W
°C/W
°C/W
Unit
Unit
µA
µA
nA
°C
°C
V
V
V
V
W
V
V
V
A
A
A
A
A
V