SPB80N03S2L-05SMD Infineon Technologies Corporation, SPB80N03S2L-05SMD Datasheet - Page 6

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SPB80N03S2L-05SMD

Manufacturer Part Number
SPB80N03S2L-05SMD
Description
Manufacturer
Infineon Technologies Corporation
Datasheet
9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
pF
10
10
10

14
12
11
10
9
8
7
6
5
4
3
2
1
0
-60
4
3
2
0
SPP80N03S2L-05
DS
= f (T
)
-20
5
D
GS
j
)
= 55 A, V
=0V, f=1 MHz
20
10
98%
60
typ
15
GS
100
= 10 V
20
C
C
C
iss
oss
rss
140 °C
V
T
V
Preliminary data
j
DS
200
30
Page 6
10 Gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
V
1.5
0.5
A
3
2
1
0
-60
3
2
1
0
0
= f (T j )
SD
SPP80N03S2L-05
)
0.4
-20
GS
0.8
p
= V
= 80 µs
20
DS
1.2
T
T
T
T
j
j
j
j
SPB80N03S2L-05
SPP80N03S2L-05
, I
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
max.
typ.
min.
D
1.6
60
= 110 µA
2
100
2001-04-05
2.4
°C
V
V
T
SD
j
160
3

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