SPB80N03S2-03SMD Infineon Technologies Corporation, SPB80N03S2-03SMD Datasheet - Page 2

• Manufacturer Part Number: SPB80N03S2-03SMD
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
V
1 Current limited by bondwire; with a R
and calculated with max. source pin temperature of 85°C.
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm 2 (one layer, 70
drain connection. PCB is vertical without blown air.
3 Diagrams are related to straight lead versions
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=250µA
=30V, V
=30V, V
=0V, I
=20V, V
=10V, I
=10V, I
2
cooling area
D
D
D
=1mA
GS
GS
DS
=80A
=80A,
=0V, T
=0V, T
=0V
SMD version
j
j
=25°C
=125°C
2)
GS
= V
thJC
j
DS
= 25 °C, unless otherwise specified
3)
= 0.5 K/W the chip is able to carry I
Preliminary data
Page 2
Symbol
V
V
I
I
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJC
thJA
thJA
min.
min.
2.1
30

-
-
-
-
-
-
-
-
-
D
m thick) copper area for
= 230A
Values
Values
0.01
typ.
typ.
2.6
2.3
SPB80N03S2-03
SPP80N03S2-03
3
1
1
-
-
-
-
-
max.
max.
100
100
3.4
3.1
0.5
62
62
40
2001-04-05
1
4
-
Unit
V
µA
nA
m
Unit
K/W