VSKT91 Vishay Siliconix, VSKT91 Datasheet - Page 3

• Manufacturer Part Number: VSKT91
• Description: (VSKT71 / VSKT91) Thyristor/Diode and Thyristor/Thyristor
• Manufacturer: Vishay Siliconix

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Note
(1)
Note
• Table shows the increment of thermal resistance R
Document Number: 94421
Revision: 24-Apr-08
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum gate voltage required to trigger
Maximum gate current required to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
BLOCKING
PARAMETER
Maximum peak reverse and off-state
leakage current at V
RMS insulation voltage
Maximum critical rate of rise of off-state voltage
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating and storage
emperature range
Maximum internal thermal resistance,
junction to case per module
Typical thermal resistance, case to heatsink
Mounting torque ± 10 %
Approximate weight
Case style
ΔR CONDUCTION PER JUNCTION
DEVICES
VSK.71
VSK.91
Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT91/16AS90
(ADD-A-PAK
RRM
180°
0.06
0.04
, V
Thyristor/Diode and Thyristor/Thyristor
DRM
SINE HALF WAVE CONDUCTION
120°
0.07
0.05
to heatsink
TM
busbar
For technical questions, contact: [e-mail]
0.09
0.06
Generation 5 Power Modules),
90°
75/95 A
SYMBOL
SYMBOL
SYMBOL
dV/dt
T
P
- V
R
R
I
I
V
J,
thJC
P
V
V
RRM,
I
DRM
G(AV)
I
I
thCS
GM
GD
thJC
GT
INS
GM
GD
T
GT
GM
0.12
0.08
Stg
60°
(1)
when devices operate at different conduction angles than DC
T
T
T
T
T
T
T
T
T
50 Hz, circuit to base, all terminals shorted
T
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
JEDEC
J
J
J
J
J
J
J
J
J
J
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= 125 °C, rated V
= 125 °C, rated V
= 125 °C, gate open circuit
= 125 °C, linear to 0.67 V
0.18
0.12
30°
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
180°
0.04
0.03
DRM
DRM
RECTANGULAR WAVE CONDUCTION
applied
applied
Anode supply = 6 V
resistive load
Anode supply = 6 V
resistive load
120°
0.08
0.05
DRM
VSK.71, .91..PbF Series
Vishay High Power Products
0.10
0.06
90°
0.13
0.08
60°
VSK.71 VSK.91 UNITS
VSK.71 VSK.91 UNITS
VSK.71 VSK.91 UNITS
0.165
2500 (1 min)
- 40 to 125
3500 (1 s)
0.25
270
150
110
500
3.0
3.0
4.0
2.5
1.7
0.1
12
10
80
15
6
5
3
4
TO-240AA
0.18
0.12
0.135
30°
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UNITS
°C/W
V/µs
K/W
mA
mA
Nm
mA
oz.
°C
W
A
V
V
V
g
3