VSKT500 Vishay Siliconix, VSKT500 Datasheet - Page 2

• Manufacturer Part Number: VSKT500
• Description: Thyristor/Diode and Thyristor/Thyristor
• Manufacturer: Vishay Siliconix

VSK.500-..PbF Series
Vishay High Power Products
www.vishay.com
2
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive on-state surge current
Maximum I
Maximum I
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state or forward
voltage drop
Maximum holding current
Maximum latching current
SWITCHING
PARAMETER
Maximum rate of rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
RMS insulation voltage
Maximum peak reverse and
off-state leakage current
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2
2
t for fusing
√t for fusing
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SYMBOL
SYMBOL
SYMBOL
V
V
I
dV/dt
I
T(RMS)
I
I
I
I
dI/dt
V
T(AV),
I
RRM
T(TO)1
T(TO)2
V
V
F(AV)
DRM
TSM,
I
FSM
I
r
r
2
t
t
I
I
INS
2
TM
FM
t1
t2
H
d
q
√t
L
t
(SUPER MAGN-A-PAK
,
T
t = 1 s
T
T
Gate current 1 A, dI
V
I
V
180° conduction, half sine wave
180° conduction, half sine wave at T
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
T
pk
TM
Thyristor/Diode and Thyristor/Thyristor
J
J
J
J
d
R
= 130 °C, linear to V
= T
= T
= 0.67 % V
= 25 °C, anode supply 12 V resistive load
= 1500 A, T
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω
= 750 A; T
J
J
maximum, I
maximum, rated V
T(AV)
T(AV)
), T
), T
DRM
J
T(AV)
T(AV)
J
= T
J
J
= 25 °C, t
= T
= T
, T
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
J
TM
TEST CONDITIONS
< I < π x I
< I < π x I
TEST CONDITIONS
TEST CONDITIONS
g
maximum, dI/dt = - 60 A/µs,
J
/dt = 1 A/µs
J
J
= 25 °C
= 400 A, V
maximum
maximum
D
= 80 % V
DRM
p
TM
RRM
RRM
= 10 ms sine pulse
T(AV)
T(AV)
/V
Power Modules), 500 A
RRM
DRM
), T
), T
DRM
Sinusoidal
half wave,
initial T
applied
C
J
J
applied
= T
= T
= 82 °C
J
J
maximum
maximum
J
= T
J
maximum
Document Number: 94420
VALUES
VALUES
VALUES
15 910
Revision: 20-Mar-08
1000
1000
3000
1591
1452
1125
1027
1000
17.8
18.7
15.0
15.7
0.85
0.93
0.36
0.32
1.50
200
100
500
785
500
2.0
82
UNITS
UNITS
UNITS
kA
kA
A/µs
V/µs
mΩ
mA
mA
µs
°C
kA
V
A
A
V
V
2
2
√s
s