MMBV609(LT1) N/A, MMBV609(LT1) Datasheet
MMBV609(LT1)
Manufacturer Part Number
MMBV609(LT1)
Description
Capacitance diode (Varactor, varicap)
Manufacturer
N/A
Datasheet
1.MMBV609LT1.pdf
(2 pages)
tuning, or any top–of–the–line application requiring back–to–back diode
configuration for minimum signal distortion and detuning. This device is
supplied in the SOT–23 plastic package for high volume, pick and place
assembly requirements.
• High Figure of Merit — Q = 450 (Typ) @ V
• Guaranteed Capacitance Range
• Dual Diodes – Save Space and Reduce Cost
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Monolithic Chip Provides Improved Matching
• Hyper Abrupt Junction Process Provides High Tuning Ratio
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control and
MAXIMUM RATINGS(EACH DIODE)
Reverse Voltage
Forward Current
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBV609LT1=5L
ELECTRICAL CHARACTERISTICS(T
Reverse Breakdown Voltage
(I
Reverse Voltage Leakage Current
(V
Diode Capacitance
(V
Capacitance Ratio C3/C8
(f=1.0MHz)
Figure of Merit
(V
Device Dissipation @T
R
R
R
=10 Adc)
R
=3.0 Vdc,f=1.0MHz)
=3.0 Vdc, f=50MHz)
=15Vdc)
Rating
Characteristic
A
= 25°C
R
= 3.0 Vdc, f = 50 MHz
A
=25°C unless otherwise noted)
Symbol
T
V
P
T
I
F
stg
R
D
J
Symbol
V
C
C
I
Q
(BR)R
R
R
T
–55 to +150
1
Value
+125
100
225
1.8
20
LESHAN RADIO COMPANY, LTD.
2
Min
250
1.8
20
26
—
3
mW/°C
mAdc
Unit
Vdc
mW
°C
°C
Typ
450
—
—
—
—
MMBV609LT1
CAPACITANCE DIODE
VOLTAGE VARIABLE
CASE
1
SOT– 23 (TO–236AB)
M a x
318–08, STYLE 9
2.4
DUAL
2
10
32
—
—
MMBV609LT1–1/2
3
nAdc
Unit
Vdc
pF
—
—
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MMBV609(LT1) Summary of contents
Page 1
Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT–23 plastic package for high ...
Page 2
TYPICAL CHARACTERISTICS 1.0MHz T = 25° REVERSE VOLTAGE (VOLTS) R Figure 1. Diode Capacitance 1. 1.0MHz 1.02 ...