MMBV609 Leshan Radio Company Co., Ltd., MMBV609 Datasheet
MMBV609
Manufacturer Part Number
MMBV609
Description
Silicon Tuning Diode
Manufacturer
Leshan Radio Company Co., Ltd.
Datasheet
1.MMBV609.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBV609LT1G
Manufacturer:
NXP
Quantity:
560
Company:
Part Number:
MMBV609LT1G
Manufacturer:
ON
Quantity:
30 000
tuning, or any top–of–the–line application requiring back–to–back diode
configuration for minimum signal distortion and detuning. This device is
supplied in the SOT–23 plastic package for high volume, pick and place
assembly requirements.
• High Figure of Merit — Q = 450 (Typ) @ V
• Guaranteed Capacitance Range
• Dual Diodes – Save Space and Reduce Cost
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Monolithic Chip Provides Improved Matching
• Hyper Abrupt Junction Process Provides High Tuning Ratio
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control and
MAXIMUM RATINGS(EACH DIODE)
Reverse Voltage
Forward Current
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBV609LT1=5L
ELECTRICAL CHARACTERISTICS(T
Reverse Breakdown Voltage
(I
Reverse Voltage Leakage Current
(V
Diode Capacitance
(V
Capacitance Ratio C3/C8
(f=1.0MHz)
Figure of Merit
(V
Device Dissipation @T
R
R
R
=10 Adc)
R
=3.0 Vdc,f=1.0MHz)
=3.0 Vdc, f=50MHz)
=15Vdc)
Rating
Characteristic
A
= 25°C
R
= 3.0 Vdc, f = 50 MHz
A
=25°C unless otherwise noted)
Symbol
T
V
P
T
I
F
stg
R
D
J
Symbol
V
C
C
I
Q
(BR)R
R
R
T
–55 to +150
1
Value
+125
100
225
1.8
20
LESHAN RADIO COMPANY, LTD.
2
Min
250
1.8
20
26
—
3
mW/°C
mAdc
Unit
Vdc
mW
°C
°C
Typ
450
—
—
—
—
MMBV609LT1
CAPACITANCE DIODE
VOLTAGE VARIABLE
CASE
1
SOT– 23 (TO–236AB)
M a x
318–08, STYLE 9
2.4
DUAL
2
10
32
—
—
MMBV609LT1–1/2
3
nAdc
Unit
Vdc
pF
—
—
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MMBV609 Summary of contents
Page 1
... R Q 250 MMBV609LT1 DUAL VOLTAGE VARIABLE CAPACITANCE DIODE CASE 318–08, STYLE 9 SOT– 23 (TO–236AB) 3 Unit Vdc mAdc mW mW/°C °C °C Typ Unit — — Vdc — 10 nAdc — — 2.4 — 450 — — MMBV609LT1–1/2 ...
Page 2
... REVERSE VOLTAGE (VOLTS) R Figure 1. Diode Capacitance 1. 1.0MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 –75 –50 LESHAN RADIO COMPANY, LTD. 1000 100 FREQUENCY ( MHz ) Figure 2. Figure of Merit = 3.0Vdc –25 0 +25 +50 +75 +100 +125 T , AMBIENT TEMPERATURE (°C) A Figure 3. Diode Capacitance MMBV609LT1 V =3Vdc 25°C A 100 1000 MMBV609LT1–2/2 ...