STP3NC90ZFP ST Microelectronics, STP3NC90ZFP Datasheet - Page 2

• Manufacturer Part Number: STP3NC90ZFP
• Description: N-CHANNEL MOSFET
• Manufacturer: ST Microelectronics

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STP3NC90Z/FP/STB3NC90Z-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
2/11
BV
Rthj-case
Rthc-sink
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
g
I
I
C
I
DS(on)
C
E
GS(th)
D(on)
C
DSS
fs
I
GSS
DSS
AR
T
oss
AS
rss
iss
(1)
l
/ T
J
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Breakdown Voltage Temp.
Coefficient
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
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Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
AR
max)
Parameter
, V
DD
I
I
V
V
V
V
V
V
V
V
I
D
D
D
V
= 50 V)
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 1.75A
= 250 µA, V
= 1 mA, V
= Max Rating
= Max Rating, T
= V
> I
> I
= ±20V
= 10V, I
= 10V
= 25V, f = 1 MHz, V
D(on)
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
D
x R
x R
GS
D
= 1.75 A
GS
= 250µA
= 0
DS(on)max,
DS(on)max,
= 0
C
= 125 °C
TO-220 / I2PAK
GS
= 0
1.25
Min.
Min.
Min.
900
3.5
3
300
0.1
62
Max Value
1250
Typ.
Typ.
Typ.
220
3.5
3.2
78
TO-220FP
1
4
3
7
3.57
Max.
Max.
Max.
±10
3.5
50
1
5
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°C/W
°C/W
°C/W
V/°C
Unit
Unit
Unit
Unit
mJ
°C
µA
µA
µA
DataSheet
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pF
pF
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V
V
A
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