STP3NA90 ST Microelectronics, STP3NA90 Datasheet - Page 3

• Manufacturer Part Number: STP3NA90
• Description: N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Symbol
Symbol
Symbol
(di/dt)
V
I
t
SDM
t
I
r(Voff)
SD
Q
Q
d(on)
I
Q
RRM
Q
t
SD
t
t
t
rr
gd
c
r
gs
f
rr
g
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
V
R
V
V
R
I
I
V
SD
SD
DD
DD
DD
DD
DD
G
G
G
= 4.7
= 47
= 4.7
= 3 A
= 3 A
= 450 V
= 720 V
= 720 V
= 720 V
= 100 V
Test Conditions
Test Conditions
Test Conditions
I
D
=3 A
di/dt = 100 A/ s
T
V
V
V
V
j
GS
GS
GS
GS
I
I
I
= 150
D
D
D
V
= 10 V
= 1.5 A
= 3 A
= 3 A
GS
= 10 V
= 10 V
= 10 V
= 0
o
C
Min.
Min.
Min.
Typ.
Typ.
Typ.
14.2
360
950
10
10
35
14
11
19
30
6
8
STP3NA90/FI
Max.
Max.
Max.
1.6
15
15
50
10
13
26
12
3
Unit
A/ s
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/6