MMBV105 E-Tech Electronics Ltd., MMBV105 Datasheet
MMBV105
Manufacturer Part Number
MMBV105
Description
Silicon Tuning Diode
Manufacturer
E-Tech Electronics Ltd.
Datasheet
1.MMBV105.pdf
(2 pages)
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Silicon Tuning Diode
general frequency control and tuning applications.It provides
solid-state reliability in replacement of mechanical
tuning methods.
MAXIMUM RATINGS(EACH DIODE)
Reverse Voltage
Forward Current
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBV105GLT1=M4E
ELECTRICAL CHARACTERISTICS(T
Reverse Breakdown Voltage
( I
Reverse Voltage Leakage Current
( V
Device Dissipation @T
This device is designed in the surface Mount package for
MMBV105GLT1
• Controlled and Uniform Tuning Ration
R
R
=10 Adc)
=28Vdc)
Device Type
Rating
Characteristic
A
= 25°C
CATHODE
V
R
3
=25Vdc,f =1.0MHz
Min
1.5
A
=25°C unless otherwise noted)
p F
C
T
Symbol
T
V
P
T
I
F
stg
R
D
J
Max
2.8
ANODE
Symbol
V
–55 to +150
1
I
(BR)R
R
Value
+125
200
225
1.8
30
V
f=50MHz
R
=3.0Vdc
Typ
250
Q
Min
30
—
mW/°C
mAdc
Unit
Vdc
mW
°C
°C
MMBV105GLT1
Min
4.0
Max
50
—
CASE
SOT– 23 (TO–236AB)
f=1.0MHz
1
C
318–08, STYLE 8
3
C
/ C
nAdc
Unit
Vdc
R
2 5
Max
2
6.5
3
I1–1/2
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MMBV105 Summary of contents
Page 1
... A Symbol Min V 30 (BR)R I — =3.0Vdc f=50MHz Max Typ 2.8 250 MMBV105GLT1 CASE 318–08, STYLE 8 SOT– 23 (TO–236AB) Unit Vdc mAdc mW mW/°C °C °C Max Unit — Vdc 50 nAdc ...
Page 2
... A 2.0 0 0.3 0.5 1.0 2.0 3.0 5 REVERSE VOLTAGE (VOLTS) R Figure 1. Diode Capacitance 1. 1.0MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 –75 1000 100 Figure 2. Figure of Merit = 3.0Vdc R –50 –25 0 +25 +50 +75 +100 T , AMBIENT TEMPERATURE (°C) A Figure 3. Diode Capacitance MMBV105GLT1 V =3Vdc 25°C A 100 1000 f , FREQUENCY ( MHz ) +125 I1–2/2 ...