APT50GT120LRG Microsemi Corporation, APT50GT120LRG Datasheet - Page 4

• Manufacturer Part Number: APT50GT120LRG
• Description: Thunderbolt IGBT
• Manufacturer: Microsemi Corporation

Typical Performance Curves
20,000
15,000
10,000
60,000
50,000
40,000
30,000
20,000
10,000
FIGURE 15, Switching Energy Losses vs Gate Resistance
5,000
FIGURE 13, Turn-On Energy Loss vs Collector Current
160
140
120
100
35
30
25
20
15
10
80
60
40
20
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
0
5
0
0
0
10
10
I
0
0
I
CE
I
CE
CE
V
T
R
L = 100μH
R
V
V
R
V
V
T
E
J
CE
G
CE
GE
G
, COLLECTOR-TO-EMITTER CURRENT (A)
J
G
CE
GE
on2,
, COLLECTOR-TO-EMITTER CURRENT (A)
, COLLECTOR-TO-EMITTER CURRENT (A)
= 25°C
= 125°C
= 1.0Ω
= 1.0Ω
=
50A
= 800V
= 800V
= +15V
= 800V
= +15V
R
1.0Ω, L
20
G
30
10
30
, GATE RESISTANCE (OHMS)
,
or 125°C
V
GE
=
40
T
100
J
= 15V
50
=
20
50
T
T
μ
J
125°C
H, V
J
=
=
60
25 or 125°C,V
25°C
CE
=
70
70
30
800V
E
80
E
E
off,
off,
on2,
50A
25A
100A
GE
90
E
40
90
off,
100
=
100A
E
15V
on2,
25A
110
120
110
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
20,000
15,000
10,000
6,000
5,000
4,000
3,000
2,000
1,000
5,000
FIGURE 14, Turn-Off Energy Loss vs Collector Current
300
250
200
150
100
FIGURE 10, Turn-Off Delay Time vs Collector Current
60
50
40
30
20
10
FIGURE 12, Current Fall Time vs Collector Current
50
0
0
0
0
10
10
I
I
I
0
CE
CE
CE
0
V
V
R
V
V
R
, COLLECTOR-TO-EMITTER CURRENT (A)
, COLLECTOR-TO-EMITTER CURRENT (A)
, COLLECTOR-TO-EMITTER CURRENT (A)
E
E
CE
GE
CE
GE
G
G
V
T
on2,
off,
J
GE
V
R
L = 100μH
= 1.0Ω
= 1.0Ω
= 800V
= 800V
= +15V
100A
= +15V
T
CE
=
G
50A
20
J
=15V,T
=
25°C, V
, JUNCTION TEMPERATURE (°C)
30
30
=
25
1.0Ω
T
800V
J
=
J
T
=125°C
40
R
GE
125°C, V
J
G
=
=
=
50
50
50
125°C
15V
1.0Ω, L
V
GE
60
GE
E
=15V,T
on2,
=
T
=
70
70
100A
15V
75
J
APT50GT120B2R_LR(G)
100
=
80
J
25°C
=25°C
μ
H, V
www.DataSheet4U.com
100
90
90
CE
100
E
E
E
=
on2,
off,
off,
800V
50A
25A
25A
120
110
110
125