STP80NF03L-04-1 ST Microelectronics, Inc., STP80NF03L-04-1 Datasheet - Page 3

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STP80NF03L-04-1

Manufacturer Part Number
STP80NF03L-04-1
Description
N-channel 30v - 0.0035ohm - 80a D2pak/i2pak/to-220 StripFET ii Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Safe Operating Area
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM ( )
t
t
t
I
r(Voff)
Q
Q
d(on)
d(off)
SD (*)
RRM
I
Q
Q
SD
t
t
t
t
t
rr
gs
gd
c
r
f
f
rr
g
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Off-Voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
(Resistive Load, Figure 3)
V
V
R
(Resistive Load, Figure 3)
V
R
(Inductive Load, Figure 5)
I
I
V
(see test circuit, Figure 5)
SD
SD
R
DD
DD
DD
clamp
DD
G
G
G
= 4.7
= 4.7
= 80 A
= 80 A
= 15 V
=24V I
= 15 V
= 20 V
= 4.7
= 24 V
Test Conditions
Test Conditions
Test Conditions
D
=80 A V
Thermal Impedance
di/dt = 100A/µs
V
V
V
V
GS
T
GS
GS
GS
j
I
I
I
D
= 150°C
D
D
GS
= 0
= 80 A
= 4.5 V
= 4.5 V
= 40 A
= 4.5 V
= 40 A
STB80NF03L-04/-1/STP80NF03L-04
=4.5V
Min.
Min.
Min.
Typ.
Typ.
Typ.
0.15
270
125
125
110
30
85
23
40
95
75
75
4
Max.
Max.
Max.
320
110
1.5
80
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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