STP22NE10L ST Microelectronics, Inc., STP22NE10L Datasheet - Page 3

• Manufacturer Part Number: STP22NE10L
• Description: N-channel 55V - 0.07 Ohm - 22A StripFET Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbol
Symbol
Symbol
V
I
SDM
t
t
t
I
SD
Q
Q
d(on)
d(of f)
d(of f)
RRM
I
Q
Q
t
t
SD
t
t
t
rr
r
gs
gd
c
f
f
rr
g
( )
( )
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(Resistive Load, see fig. 3)
V
V
R
(Resistive Load, see fig. 3)
Vclamp = 80 V
R
(Inductive Load, see fig. 5)
I
I
V
(see test circuit, fig. 5)
SD
SD
DD
DD
DD
DD
G
G
G
= 4.7
= 4.7
= 4.7
= 16 A
= 16 A
= 50 V
= 50 V
= 80 V I
= 40 V
Test Conditions
Test Conditions
Test Conditions
V
D
GS
= 16 A V
= 0
Thermal Impedance
di/dt = 100 A/ s
T
j
V
GS
V
V
= 150
GS
GS
GS
I
I
D
= 10 V
D
I
= 8 A
= 4.5 V
= 8 A
= 4.5 V
= 4.5 V
D
= 16 A
o
C
Min.
Min.
Min.
Typ.
Typ.
Typ.
100
300
40
80
24
55
11
45
12
12
17
35
6
STP22NE10L
Max.
Max.
Max.
1.5
31
22
88
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
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