STP21N05L ST Microelectronics, Inc., STP21N05L Datasheet - Page 2
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STP21N05L
Manufacturer Part Number
STP21N05L
Description
Old PRODUCT: Not Suitable For Design-in
Manufacturer
ST Microelectronics, Inc.
Datasheet
1.STP21N05L.pdf
(10 pages)
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STP21N05L/FI
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/10
V
Symbol
Symbol
Symbol
Symbol
R
R
R
R
V
g
(BR)DSS
I
thj-case
t hc-sink
C
thj-amb
I
I
C
E
E
DS(on)
C
GS(th)
D(on)
fs
I
I
DS S
GSS
T
A R
A R
oss
AS
AR
rss
iss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Repetitive Avalanche Energy
(pulse width limited by T
Avalanche Current, Repetitive or Not-Repetitive
(T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
c
= 100
Parameter
Parameter
Parameter
o
j
DS
C, pulse width limited by T
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
j
I
V
V
V
V
V
V
V
V
AR
Parameter
max,
max,
D
DS
DS
GS
DS
GS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 5 V I
= 10 V
= 25 V
= Max Rating
= Max Rating x 0.8 T
=
= 5 V I
> I
> I
case
DD
D(on)
D(on)
GS
< 1%)
< 1%)
= 25 V)
15 V
= 25
Test Conditions
Test Conditions
Test Conditions
x R
x R
I
D
D
j
D
f = 1 MHz
max,
= 10.5 A T
V
= 10.5 A
= 250 A
o
DS(on)max
DS(on)max
C unless otherwise specified)
GS
= 0
< 1%)
Max
Max
Typ
c
V
I
c
D
= 100
GS
= 125
= 10.5 A
= 0
o
C
TO-220
o
C
1.88
Min.
Min.
Min.
50
21
1
6
62.5
300
Max Value
0.5
0.065
ISOWATT220
Typ.
Typ.
Typ.
700
250
1.6
15
70
21
80
20
14
4.29
0.085
Max.
Max.
Max.
1000
1000
0.17
250
350
100
2.5
100
Unit
Unit
Unit
o
o
o
Unit
nA
pF
pF
pF
C/W
C/W
C/W
mJ
mJ
o
V
V
A
S
A
A
A
A
C