APTM120DA30CT1G Microsemi Corporation, APTM120DA30CT1G Datasheet
APTM120DA30CT1G
Related parts for APTM120DA30CT1G
APTM120DA30CT1G Summary of contents
Page 1
... Drain - Source ON Resistance DSon P Maximum Power Dissipation D I Avalanche current (repetitive and non repetitive) AR These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM120DA30CT1G V = 1200V DSS R = 300mΩ typ @ Tj = 25°C DSon I = 31A @ Tc = 25°C D Application • ...
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... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight APTM120DA30CT1G = 25°C unless otherwise specified j Test Conditions T = 25°C V =1200V 125°C GS ...
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... See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Typical Mosfet Performance Curve Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.2 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0.05 0 0.00001 0.0001 APTM120DA30CT1G T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ⎟ ⎟ ...
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... I =25A =25° =600V =960V 100 200 300 400 500 Gate Charge (nC) APTM120DA30CT1G Low Voltage Output Characteristics 50 T =125° Drain to Source Voltage (V) DS Transfert Characteristics 40 V > D(on) DS(on) 250µs pulse test @ < ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM120DA30CT1G Single Pulse 0.001 ...